Adsorptive structure and DCD of (a) PdInP 3 /SO 2 , (b) PtInP 3 /SO 2


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Download figure: Standard image Figure 2 shows the specific contact resistivity as a function of annealing temperature for Au/Ni and Au/Pt/Ni contacts to p-InP, where the annealing time remained unchanged at 1 min. As shown in Fig. 2(a), the minimum specific contact resistance of 5.12 × 10 −5 Ω ⋅cm 2 is observed when annealing at 460 °C for the as-deposited contact of Au/Ni.


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To interpret test results use the reference range in the laboratory report. Prothrombin Time with INR - Screening test for abnormalities of coagulation factors that are involved in the extrinsic pathway. Also used to monitor effects of Warfarin therapy and to study patients with hereditary and acquired clotting disorders.


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Pt/InP 0 X-ray diffraction indicates that by 500 C, the reaction is essentially complete, with 0 0 little change evident for 550 C and 600 C anneals. The XRD spectra for these tem- peratures match the standard powder diffraction spectrum for PtIn2; the extra peaks - 3- can be accounted for by PtP 2 (figure 1).


DOS of (a) PdInP 3 /SO 2 , (b) PtInP 3 /SO 2 , (c) AuInP 3 /SO 2

Pt 5 InP does not form at the amorphous layer/semiconductor interface, but at the amorphous layer/metallisation interface, and as such exhibits no preferred orientation with the InP substrate. This is in contrast to Pd/InP where crystalline ternary phases nucleate, and then grow with a preferred orientation, at the semiconductor surface..


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A prothrombin time (PT) test measures how long it takes for a clot to form in a blood sample. An INR (international normalized ratio) is a type of calculation based on PT test results. Prothrombin is a protein made by the liver. It is one of several substances known as clotting (coagulation) factors. When you get a cut or other injury that.


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The Pt@InP NPAs were synthesized using a facile two-step etching method followed by a dipping and electrodeposition process as diagramed in Fig. 1.The first step was the formation of the ordered InP NPAs with a two-step etching method [29].The starting material was Sn-doped InP wafer, which was firstly etched at a constant voltage in 1 M HCl aqueous solution.


(Color online) (a) SEM image of Ptcoated InP substrate after

INP, intermittent negative pressure; IPC, intermittent pneumatic compression; PT, placebo therapy All procedures complied with the study protocol. Only eligible participants were randomized to the groups, and no assessors were unblinded during the study.


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The paper describes how electrical properties of Pt/InP Schottky diode were affected by semiconductor type. We fabricated Pt/p-InP and Pt/n-InP Schottky diodes and measured electrical characteristics from 20 K to 400 K. Thicknesses of less than 30 nm of platinum were deposited on the two types of indium phosphide substrates using magnetron sputtering technique after the creation of Zn-Au ohmic.


(Color online) (a) Lowmagnification SEM image of Ptcoated InP

With the PTT test, the reference range is between 25 and 33 seconds. As with the PT test, a higher PTT number means your blood is taking longer than usual to clot. A lower PTT number means that your blood is clotting faster than normal. There are several reasons why this might occur. Clotting Too Quickly.


Adsorptive structure and DCD of (a) PdInP 3 /SO 2 , (b) PtInP 3 /SO 2

The prothrombin time (PT) - along with its derived measures of prothrombin ratio (PR) and international normalized ratio (INR) - is an assay for evaluating the extrinsic pathway and common pathway of coagulation.This blood test is also called protime INR and PT/INR.They are used to determine the clotting tendency of blood, in such things as the measure of warfarin dosage, liver damage, and.


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A typical PT result is 10 to 14 seconds. Higher than that means your blood is taking longer than normal to clot and may be a sign of many conditions, including: Bleeding or clotting disorder. Lack.


(PDF) Transport properties of metalsemiconductor junctions on ntype

Ion‐beam‐assisted deposition of Pt on p‐InP at room temperature was performed in order to produce Pt epitaxial films with high quality and Pt/p‐InP (100) heterostructures with sharp interfaces.From the x‐ray diffraction analysis, the grown film was found to be a Pt heteroepitaxial film. Auger electron spectroscopy measurements showed that the composition of the as‐grown film was Pt.


Typical IV characteristics of Pt/Au contacts to nInP as a function of

Inpatient status means that if you have serious medical problems that require highly technical skilled care, and you'll need to be in the hospital for more than a day. Observation status means that have a condition that healthcare providers want to monitor to see if you require inpatient admission. Observation status is an outpatient status.


Frequencydependent CV characteristics of Pt/HfO2/InP/InAs MOS

The Pt@InP NPAs were synthesized using a facile two-step etching method followed by a dipping and electrodeposition process as diagramed in Fig. 1. The first step was the formation of the ordered InP NPAs with a two-step etching method [29]. The starting material was Sn-doped InP wafer, which was firstly etched at a constant voltage in 1 M HCl.

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